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1. Correction: Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2. Issue 2 (6th January 2021)

2. Correction: Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2. Issue 2 (6th January 2021)

7. Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles. Issue 5 (11th February 2020)

8. Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector. Issue 5 (3rd February 2021)

9. Study of amorphous Cu–Te–Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices. Issue 38 (30th March 2016)