1. Characterization of high electron mobility transistor fabricated on hydride vapor phase epitaxy‐grown GaN templates containing various Fe concentrations. Issue 8 (20th March 2017) Authors: Sugimoto, K.; Nishihira, T.; Arita, N.; Dempo, Y.; Okada, N.; Tadatomo, K. Journal: Physica status solidi Issue: Volume 14:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗