1. Stack optimization of oxide-based RRAM for fast write speed (<1 μs) at low operating current (<10 μA). (November 2016) Authors: Chen, C.Y.; Goux, L.; Fantini, A.; Degraeve, R.; Redolfi, A.; Groeseneken, G.; Jurczak, M. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 198 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Stack optimization of oxide-based RRAM for fast write speed (<1 μs) at low operating current (<10 μA). (November 2016) Authors: Chen, C.Y.; Goux, L.; Fantini, A.; Degraeve, R.; Redolfi, A.; Groeseneken, G.; Jurczak, M. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 198 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016) Authors: Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Simicic, M.; Putcha, V.; Bury, E.; Cho, M.; Degraeve, R.; Linten, D.; Groeseneken, G.; Debacker, P.; Parvais, B.; Raghavan, P.; Catthoor, F.; Rzepa, G.; Waltl, M.; Goes, W.; Grasser, T. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016) Authors: Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Simicic, M.; Putcha, V.; Bury, E.; Cho, M.; Degraeve, R.; Linten, D.; Groeseneken, G.; Debacker, P.; Parvais, B.; Raghavan, P.; Catthoor, F.; Rzepa, G.; Waltl, M.; Goes, W.; Grasser, T. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗