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Author/Creator Dalcanale, S.

1. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. (March 2016)

Authors:
Meneghini, M.; Hilt, O.; Fleury, C.; Silvestri, R.; Capriotti, M.; Strasser, G.; Pogany, D.; Bahat-Treidel, E.; Brunner, F.; Knauer, A.; Würfl, J.; Rossetto, I.; Zanoni, E.; Meneghesso, G.; Dalcanale, S.
Journal:
Microelectronics and reliability
Issue:
Volume 58(2016)
Page Start:
177
Record Type:
Journal Article
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