1. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres. (7th October 2020) Authors: Tadjer, Marko J; Freitas, Jaime A; Culbertson, James C; Weber, Marc H; Glaser, Evan R; Mock, Alyssa L; Mahadik, Nadeemullah A; Schmieder, Kenneth; Jackson, Eric; Gallagher, James C; Feigelson, Boris N; Kuramata, Akito Journal: Journal of physics Issue: Volume 53:Number 50(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗