1. Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process. (12th October 2015) Authors: Zettler, J K; Corfdir, P; Geelhaar, L; Riechert, H; Brandt, O; Fernández-Garrido, S Journal: Nanotechnology Issue: Volume 26:Number 44(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗