1. Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology. (February 2017) Authors: Berthelon, R.; Andrieu, F.; Ortolland, S.; Nicolas, R.; Poiroux, T.; Baylac, E.; Dutartre, D.; Josse, E.; Claverie, A.; Haond, M. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 72 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Diffusion and trapping of implanted hydrogen in a Si/Si:B/Si structure. (15th August 2017) Authors: Royal, A.; Mazen, F.; Gonzatti, F.; Veillerot, M.; Claverie, A. Journal: Materials science in semiconductor processing Issue: Volume 67(2017) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of Some Processing Steps onto the Strain Distributions in FD-SOI CMOS Planar Devices: A Contribution of Dark-Field Electron Holography. (1st January 2018) Authors: Boureau, V.; Benoit, D.; Claverie, A. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 9(2018) Page Start: P473 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Impact of Some Processing Steps onto the Strain Distributions in FD-SOI CMOS Planar Devices: A Contribution of Dark-Field Electron Holography. (23rd August 2018) Authors: Boureau, V.; Benoit, D.; Claverie, A. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 9(2018) Page Start: P473 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Modelling of point defect complex formation and its application to H+ ion implanted silicon. (15th October 2015) Authors: Cherkashin, N.; Darras, F.-X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A. Journal: Acta materialia Issue: Volume 99(2015) Page Start: 187 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Modelling of point defect complex formation and its application to H+ ion implanted silicon. (15th October 2015) Authors: Cherkashin, N.; Darras, F.-X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A. Journal: Acta materialia Issue: Volume 99(2015) Page Start: 187 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices. Issue 10 (9th August 2016) Authors: Bonnevialle, A.; Reboh, S.; Le Royer, C.; Morand, Y.; Hartmann, J.‐M.; Rouchon, D.; Pedini, J.‐M.; Tabone, C.; Rambal, N.; Payet, A.; Plantier, C.; Boeuf, F.; Haond, M.; Claverie, A.; Vinet, M. Journal: Physica status solidi Issue: Volume 13:Issue 10-12(2016) Page Start: 740 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Study of surface exfoliation induced by hydrogen implantation and annealing in GaSb (100) substrates. (1st November 2021) Authors: Pathak, Ravi; Dadwal, U.; Kapoor, A.K.; Vallet, M.; Claverie, A.; Singh, R. Journal: Materials science in semiconductor processing Issue: Volume 134(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗