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3. Growth of boron nitride films on w‐AlN (0001), 4° off‐cut 4H‐SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition. Issue 3 (21st January 2016)

4. Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization (Phys. Status Solidi RRL 3/2018). Issue 3 (6th March 2018)

5. Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization. Issue 3 (16th January 2018)

7. Monolayer MoS2 on sapphire: an azimuthal reflection high-energy electron diffraction perspective. (17th December 2020)

9. Tuning of the electronic and vibrational properties of epitaxial MoS2 through He-ion beam modification. (19th February 2023)