1. High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs. (7th December 2015) Authors: Wang, Yun-Hsiang; Liang, Yung C; Samudra, Ganesh S; Chu, Po-Ju; Liao, Ya-Chu; Huang, Chih-Fang; Kuo, Wei-Hung; Lo, Guo-Qiang Journal: Semiconductor science and technology Issue: Volume 31:Number 2(2016:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗