1. Exploration of Trap Levels in GaN and Al0.2Ga0.8N Layers by Temperature-Dependent Photoconductivity Measurement. (2018) Authors: Prakash, Nisha; Kumar, Gaurav; Barvat, Arun; Anand, Kritika; Choursia, B.; Pal, Prabir; Khanna, Suraj P. Journal: Materials today Issue: Volume 5:Number 1(2018)Part 2 Page Start: 2132 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗