1. Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy. Issue 2 (4th January 2017) Authors: Park, Taejin; Kim, Hoijoon; Leem, Mirine; Ahn, Wonsik; Choi, Seongheum; Kim, Jinbum; Uh, Joon; Kwon, Keewon; Jeong, Seong-Jun; Park, Seongjun; Kim, Yunseok; Kim, Hyoungsub Journal: RSC advances Issue: Volume 7:Issue 2(2017) Page Start: 884 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of High‐Pressure H2 and D2 Post‐Metallization Annealing on the Electrical Properties of HfO2/Si0.7Ge0.3. Issue 4 (1st January 2023) Authors: Kim, Jinyong; Choi, Seongheum; Nguyen, An Hoang-Thuy; Lee, Woohui; Choi, Rino; Kim, Hyoungsub Journal: Physica status solidi Issue: Volume 17:Issue 4(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Formation of Er‐germanosilicide films on strained Si1−xGex with different Ge contents. Issue 4 (15th January 2015) Authors: Choi, Seongheum; Choi, Juyun; Kim, Hyoungsub Journal: Physica status solidi Issue: Volume 212:Issue 4(2015:Apr.) Page Start: 775 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗