1. NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer. (1st November 2016) Authors: Suzuki, Asamira; Choe, Songbeak; Yamada, Yasuhiro; Otsuka, Nobuyuki; Ueda, Daisuke Journal: Japanese journal of applied physics Issue: Volume 55:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗