1. AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster. (August 2017) Authors: Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young Journal: Solid-state electronics Issue: Volume 134(2017) Page Start: 30 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors. (August 2016) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors. (August 2016) Authors: Lee, Jae-Gil; Kim, Hyun-Seop; Seo, Kwang-Seok; Cho, Chun-Hyung; Cha, Ho-Young Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗