Author/Creator: Chin, Fun-Tat - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chin, Fun-Tat

1. Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment. (13th November 2015)

Authors:: Hsiao, Yu-Ping; Yang, Wen-Luh; Wu, Chi-Chang; Lin, Li-Min; Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Ke-Luen
Journal:: Japanese journal of applied physics
Issue:: Volume 55:Number 1(2016:Jan.)Supplement
Page Start:
Record Type:: Journal Article
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2. Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories. Issue 11 (November 2015)

Authors:: Hsiao, Yu-Ping; Yang, Wen-Luh; Lin, Li-Min; Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Ke-Luen; Wu, Chi-Chang
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 11(2015)
Page Start:: 2188
Record Type:: Journal Article
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3. Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM). (January 2015)

Authors:: Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng
Journal:: Solid-state electronics
Issue:: Volume 103(2015)
Page Start:: 190
Record Type:: Journal Article
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