Author/Creator: Cherkashin, N. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Cherkashin, N.

1. Modelling of point defect complex formation and its application to H+ ion implanted silicon. (15th October 2015)

Authors:: Cherkashin, N.; Darras, F.-X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A.
Journal:: Acta materialia
Issue:: Volume 99(2015)
Page Start:: 187
Record Type:: Journal Article
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2. Modelling of point defect complex formation and its application to H+ ion implanted silicon. (15th October 2015)

Authors:: Cherkashin, N.; Darras, F.-X.; Pochet, P.; Reboh, S.; Ratel-Ramond, N.; Claverie, A.
Journal:: Acta materialia
Issue:: Volume 99(2015)
Page Start:: 187
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C. (May 2019)

Authors:: Ledentsov, N.; Agustin, M.; Shchukin, V.A.; Kropp, J.-R.; Ledentsov, N.N.; Chorchos, Ł.; Turkiewicz, J.P.; Khan, Z.; Cheng, C.-L.; Shi, J.W.; Cherkashin, N.
Journal:: Solid-state electronics
Issue:: Volume 155(2019)
Page Start:: 150
Record Type:: Journal Article
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4. Room temperature yellow InGaAlP quantum dot laser. (May 2019)

Authors:: Ledentsov, N.N.; Shchukin, V.A.; Shernyakov, Yu. M.; Kulagina, M.M.; Payusov, A.S.; Gordeev, N. Yu.; Maximov, M.V.; Zhukov, A.E.; Karachinsky, L. Ya.; Denneulin, T.; Cherkashin, N.
Journal:: Solid-state electronics
Issue:: Volume 155(2019)
Page Start:: 129
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗