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- Chen, Nanting [remove] 2
- 621.381 1
- 621.38152 1
- AlGaN/GaN HEMT -- Transconductance -- Linearity -- Acceptor-like trap -- Barrier layer 1
- Electronics -- Periodicals 1
- Semiconducteurs -- Périodiques 1
- Semiconductors -- Periodicals 1
- high electron mobility transistors -- aluminium compounds -- gallium compounds -- wide band gap semiconductors -- III‐V semiconductors -- high‐k dielectric thin films -- low‐k dielectric thin films -- electric fields 1
- low‐k compound passivation layer -- high‐k compound passivation layer -- dielectric constants -- horizontal electrical field -- BV enhancement -- field‐plate structure -- physical mechanism -- design principles -- numerical simulation -- high breakdown voltage HEMT -- high‐electron mobility transistors -- voltage 1400 V -- voltage 917 V -- voltage 288 V -- AlGaN‐GaN -- La2O3 -- Si3N4 1