1. A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs. (21st August 2018) Authors: Lin, Yen-Ku; Bergsten, Johan; Leong, Hector; Malmros, Anna; Chen, Jr-Tai; Chen, Ding-Yuan; Kordina, Olof; Zirath, Herbert; Chang, Edward Yi; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 33:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (1st March 2022) Authors: Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. (25th January 2022) Authors: Chen, Ding-Yuan; Persson, Axel R; Wen, Kai-Hsin; Sommer, Daniel; Grünenpütt, Jan; Blanck, Hervé; Thorsell, Mattias; Kordina, Olof; Darakchieva, Vanya; Persson, Per O Å; Chen, Jr-Tai; Rorsman, Niklas Journal: Semiconductor science and technology Issue: Volume 37:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗