Search

Author/Creator Chaudhuri, Reet

1. (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. (3rd July 2019)

Authors:
Shinohara, Keisuke; King, Casey; Regan, Eric; Gomez, M P; Bergman, Joshua; Carter, Andrew; Arias, Andrea; Urteaga, Miguel; Brar, Berinder; Page, Ryan; Chaudhuri, Reet; Islam, Moudud; Xing, Huili Grace; Jena, Debdeep
Journal:
ECS transactions
Issue:
Volume 92:Number 4(2019)
Page Start:
103
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors. Issue 4 (14th October 2021)

Authors:
Chaudhuri, Reet; Hickman, Austin; Singhal, Jashan; Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep
Other Names:
Hammar Mattias guestEditor.; Hallén Anders guestEditor.; Lourdudoss Sebastian guestEditor.
Journal:
Physica status solidi
Issue:
Volume 219:Issue 4(2022)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures. Issue 4 (15th January 2020)

Authors:
Chaudhuri, Reet; Bader, Samuel James; Chen, Zhen; Muller, David; Xing, Huili Grace; Jena, Debdeep
Other Names:
Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor.
Journal:
Physica status solidi
Issue:
Volume 257:Issue 4(2020)
Page Start:
n/a
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗