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Author/Creator Chang, S.-J.

3. Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation. (15th June 2018)

Authors:
Chang, S.-J.; Jung, H.-W.; Do, J.-W.; Cho, K. J.; Kim, J.-J.; Jang, Y. J.; Yoon, H. S.; Ahn, H.-K.; Min, B.-G.; Kim, H.; Yang, J.-M.; Kwon, H.-S.; Lim, J.-W.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 7:Number 6(2018)
Page Start:
N86
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

4. Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation. (1st January 2018)

Authors:
Chang, S.-J.; Jung, H.-W.; Do, J.-W.; Cho, K. J.; Kim, J.-J.; Jang, Y. J.; Yoon, H. S.; Ahn, H.-K.; Min, B.-G.; Kim, H.; Yang, J.-M.; Kwon, H.-S.; Lim, J.-W.
Journal:
ECS journal of solid state science and technology
Issue:
Volume 7:Number 6(2018)
Page Start:
N86
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗