1. Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors. (5th March 2019) Authors: Chang, Li-Cheng; Yin, Shin-Yi; Wu, Chao-Hsin Journal: Journal of physics Issue: Volume 52:Number 19(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗