Author/Creator: Chang, Edward-Yi - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chang, Edward-Yi

1. Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors. (10th June 2015)

Authors:: Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung
Journal:: Japanese journal of applied physics
Issue:: Volume 54:Number 7(2015:Jul.)
Page Start:
Record Type:: Journal Article
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2. Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures. (April 2016)

Authors:: Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen-Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi
Journal:: Materials science in semiconductor processing
Issue:: Volume 45(2016:Apr.)
Page Start:: 1
Record Type:: Journal Article
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3. Optimization for the growth condition of in situ SiNx cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition. (10th January 2022)

Authors:: Zheng, Xia-Xi; Huang, Jen-Yao; Yang, Chih-Yi; Nguyen, Hoang-Tan-Ngoc; Chang, Edward-Yi
Journal:: Applied physics express
Issue:: Volume 15:Number 2(2022)
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Record Type:: Journal Article
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4. Optimization for the growth condition of in situ SiNx cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition. (1st February 2022)

Authors:: Zheng, Xia-Xi; Huang, Jen-Yao; Yang, Chih-Yi; Nguyen, Hoang-Tan-Ngoc; Chang, Edward-Yi
Journal:: Applied physics express
Issue:: Volume 15:Number 2(2022)
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Record Type:: Journal Article
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5. Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD. (April 2018)

Authors:: Luong, Tien Tung; Ho, Yen-Teng; Wong, Yuen-Yee; Chang, Shane; Chang, Edward-Yi
Journal:: Microelectronics and reliability
Issue:: Volume 83(2018)
Page Start:: 286
Record Type:: Journal Article
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