Author/Creator: Chandrasekar, L. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Chandrasekar, L.

1. Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. (March 2022)

Authors:: Shaik, Rameez Raja; Chandrasekar, L.; Raskin, Jean-Pierre; Pradhan, K.P.
Journal:: Microelectronics journal
Issue:: Volume 121(2022)
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Record Type:: Journal Article
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2. Memoryless linearity in undoped and B-doped graphene FETs: A relative investigation to report improved reliability. (October 2021)

Authors:: Chandrasekar, L.; Pradhan, K.P.
Journal:: Microelectronics and reliability
Issue:: Volume 125(2021)
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Record Type:: Journal Article
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