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Author/Creator Chalkov, Vadim

1. Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates. (September 2019)

Authors:
Shengurov, Vladimir; Denisov, Sergei; Chalkov, Vadim; Trushin, Vladimir; Zaitsev, Andrei; Prokhorov, Dmitry; Filatov, Dmitry; Zdoroveishchev, Anton; Ved, Mikhail; Kudrin, Alexey; Dorokhin, Mikhail; Buzynin, Yuri
Journal:
Materials science in semiconductor processing
Issue:
Volume 100(2019)
Page Start:
175
Record Type:
Journal Article
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