1. (Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC. (3rd July 2019) Authors: Yang, Jiancheng; Fares, Chaker; Carey, Patrick H; Xian, Minghan; Ren, Fan; Tadjer, Marko J.; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Sharma, Ribhu; Law, Mark E; Raad, Peter E.; Komarov, Pavel L.; Smith, David J; Kuramata, Akito; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 92:Number 7(2019) Page Start: 15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers. (1st January 2019) Authors: Carey, Patrick H; Yang, Jiancheng; Ren, Fan; Sharma, Ribhu; Law, Mark; Pearton, Stephen J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3221 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers. (3rd May 2019) Authors: Carey, Patrick H; Yang, Jiancheng; Ren, Fan; Sharma, Ribhu; Law, Mark; Pearton, Stephen J. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 7(2019) Page Start: Q3221 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗