1. A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density. (3rd November 2022) Authors: Chen, Kuangli; Su, Yuanzhang; Ruan, Jiajia; Cai, Yonglian; Zhu, Liyang; Zhang, Bo; Zhou, Qi Journal: Journal of physics Issue: Volume 55:Number 44(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage. (22nd December 2020) Authors: Chen, Kuangli; Zhou, Qi; Zhu, Liyang; Dong, Zhiwen; Huang, Peng; Deng, Chao; Cai, Yonglian; Gao, Wei; Zhou, Chunhua; Chen, Wanjun; Zhang, Bo Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗