1. Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Issue 9 (August 2015) Authors: Abbate, C.; Busatto, G.; Iannuzzo, F.; Mattiazzo, S.; Sanseverino, A.; Silvestrin, L.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1496 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. (September 2017) Authors: Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 314 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. (September 2018) Authors: Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 677 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit. (September 2019) Authors: Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Measure of high frequency input impedance to study the instability of power devices in short circuit. (September 2018) Authors: Abbate, C.; Busatto, G.; Sanseverino, A.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 540 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. P162 Multimodal imaging in ELECT-TDCS: Associations of cortical structure and functional connectivity with depression outcomes after tDCS treatment. Issue 4 (April 2020) Authors: Bulubas, L.; Padberg, F.; Bueno, P.V.; Duran, F.; Busatto, G.; Amaro, E.; Benseñor, I.M.; Lotufo, P.A.; Goerigk, S.; Gattaz, W.; Keeser, D.; Brunoni, A.R. Journal: Clinical neurophysiology Issue: Volume 131:Issue 4(2020:Apr.) Page Start: e105 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET. (November 2020) Authors: Busatto, G.; Di Pasquale, A.; Marciano, D.; Palazzo, S.; Sanseverino, A.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. (September 2018) Authors: Abbate, C.; Busatto, G.; Mattiazzo, S.; Sanseverino, A.; Silvestrin, L.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 941 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Sex differences in total brain volume in a cognitively unimpaired elderly population. (13th April 2021) Authors: Buchpiguel, M.; Busatto, G.; Rosa, P.; Squarzoni, P.; Duran, F.; Tamashiro-Duran, J.; Leite, C.; Lotufo, P.; Scazufca, M.; Alves, T. Journal: European psychiatry Issue: Volume 64:Supplement 1(2021) Page Start: S407 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗