Author/Creator: Bockowski, M. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Bockowski, M.

1. Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives. Issue 3 (September 2018)

Authors:: Zajac, M.; Kucharski, R.; Grabianska, K.; Gwardys-Bak, A.; Puchalski, A.; Wasik, D.; Litwin-Staszewska, E.; Piotrzkowski, R.; Z Domagala, J.; Bockowski, M.
Journal:: Progress in crystal growth and characterization of materials
Issue:: Volume 64:Issue 3(2018)
Page Start:: 63
Record Type:: Journal Article
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2. Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method. Issue 5 (29th January 2015)

Authors:: Dashdorj, J.; Zvanut, M. E.; Bockowski, M.
Journal:: Physica status solidi
Issue:: Volume 252:Issue 5(2015:May)
Page Start:: 923
Record Type:: Journal Article
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3. Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate. (15th June 2019)

Authors:: Kruszewski, P.; Prystawko, P.; Grabowski, M.; Sochacki, T.; Sidor, A.; Bockowski, M.; Jasinski, J.; Lukasiak, L.; Kisiel, R.; Leszczynski, M.
Journal:: Materials science in semiconductor processing
Issue:: Volume 96(2019)
Page Start:: 132
Record Type:: Journal Article
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4. Electron paramagnetic resonance studies of bulk Mg‐doped GaN grown by high nitrogen pressure solution method. Issue 4 (18th March 2015)

Authors:: Dashdorj, J.; Willoughby, W. R.; Zvanut, M. E.; Bockowski, M.
Journal:: Physica status solidi
Issue:: Volume 12:Issue 4/5(2015:Apr.)
Page Start:: 338
Record Type:: Journal Article
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5. Electron paramagnetic resonance studies of bulk Mg‐doped GaN grown by high nitrogen pressure solution method. Issue 4 (18th March 2015)

Authors:: Dashdorj, J.; Willoughby, W. R.; Zvanut, M. E.; Bockowski, M.
Journal:: Physica status solidi
Issue:: Volume 12:Issue 4/5(2015:Apr.)
Page Start:: 338
Record Type:: Journal Article
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6. Growth of AlN, GaN and InN from the solution. (1st December 2004)

Authors:: Krukowski, S.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Suski, T.; Nowak, G.; Borysiuk, J.; Wroblewski, M.; Leszczynski, M.; Perlin, P.; Porowski, S.; Weyher, J.L.
Journal:: International journal of material & product technology
Issue:: Volume 22:Number 1-3(2005)
Page Start:: 226
Record Type:: Journal Article
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7. Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds. (23rd May 2019)

Authors:: Amilusik, M.; Wlodarczyk, D.; Suchocki, A.; Bockowski, M.
Journal:: Japanese journal of applied physics
Issue:: Volume 58:Number SC(2019)
Page Start:
Record Type:: Journal Article
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8. Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates. (1st March 2019)

Authors:: Gaubas, E.; Baronas, P.; Čeponis, T.; Deveikis, L.; Dobrovolskas, D.; Kuokstis, E.; Mickevičius, J.; Rumbauskas, V.; Bockowski, M.; Iwinska, M.; Sochacki, T.
Journal:: Materials science in semiconductor processing
Issue:: Volume 91(2019)
Page Start:: 341
Record Type:: Journal Article
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