Search

Author/Creator Bisi, Davide

1. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. (January 2015)

Authors:
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan
Journal:
Solid-state electronics
Issue:
Volume 103(2015)
Page Start:
127
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

3. Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs. Issue 4 (7th April 2016)

Authors:
Benvegnù, Agostino; Bisi, Davide; Laurent, Sylvain; Meneghini, Matteo; Meneghesso, Gaudenzio; Barataud, Denis; Zanoni, Enrico; Quere, Raymond
Editors:
Barataud, Denis; Tournier, Éric; Lalande, Michèle
Journal:
International journal of microwave and wireless technologies
Issue:
Volume 8:Issue 4/5(2016)
Page Start:
663
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗