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1. Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (Phys. Status Solidi RRL 8/2017). Issue 8 (18th August 2017)

2. Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon (Phys. Status Solidi RRL 8/2017). Issue 8 (August 2017)

3. Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon. Issue 8 (27th June 2017)