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11. Medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors. (1st January 2015)

12. Novel back‐channel‐etch process flow based a‐IGZO TFTs for circuit and display applications on PEN foil. Issue 9 (12th November 2013)

15. Paper No 19.3: Back‐Channel‐Etch Process Flow for a‐IGZO TFTs. (September 2013)

16. Paper No S12.5: Self‐Aligned a‐IGZO TFTs: Impact of S/D Contacts Formation on Their Negative‐Bias‐Illumination‐Stress (NBIS) Instability. Issue 1 (September 2015)

17. P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics. Issue 1 (June 2015)

18. Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications. Issue 3 (10th June 2013)