1. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. (November 2016) Authors: Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S.L.C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. (November 2016) Authors: Capriotti, M.; Bahat Treidel, E.; Fleury, C.; Bethge, O.; Ostermaier, C.; Rigato, M.; Lancaster, S.L.C.; Brunner, F.; Detz, H.; Hilt, O.; Würfl, J.; Pogany, D.; Strasser, G. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 118 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Rhodium Germanide Schottky Barrier Contacts. (1st January 2015) Authors: Lutzer, B.; Hummer, M.; Simsek, S.; Zimmermann, C.; Amsuess, A.; Hutter, H.; Detz, H.; Stoeger-Pollach, M.; Bethge, O.; Bertagnolli, E. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 9(2015) Page Start: P387 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Rhodium Germanide Schottky Barrier Contacts. (27th August 2015) Authors: Lutzer, B.; Hummer, M.; Simsek, S.; Zimmermann, C.; Amsuess, A.; Hutter, H.; Detz, H.; Stoeger-Pollach, M.; Bethge, O.; Bertagnolli, E. Journal: ECS journal of solid state science and technology Issue: Volume 4:Number 9(2015) Page Start: P387 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗