1. Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Issue 9 (August 2015) Authors: Petitdidier, S.; Berthet, F.; Guhel, Y.; Trolet, J.L.; Mary, P.; Gaquière, C.; Boudart, B. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1719 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗