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3. Magnetoresistance and electrical resistivity of N‐doped multi‐walled carbon nanotubes at low temperatures. Issue 6 (27th February 2015)

4. New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology. Issue 1 (9th December 2013)