1. High mobility Ge 2DHG based MODFETs for low-temperature applications. (1st March 2023) Authors: Weißhaupt, David; Funk, Hannes S; Oehme, Michael; Bloos, Dominik; Berkmann, Fritz; Seidel, Lukas; Fischer, Inga A; Schulze, Jörg Journal: Semiconductor science and technology Issue: Volume 38:Number 3(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si. (May 2022) Authors: Elogail, Yasmine; Berkmann, Fritz; Clausen, Caterina J.; Fischer, Inga A.; Hänel, Linda A.; Schwarz, Daniel; Schulze, Jörg Journal: Microelectronics journal Issue: Volume 123(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Plasmonic gratings from highly doped Ge1−ySny films on Si. (31st August 2021) Authors: Berkmann, Fritz; Ayasse, Markus; Schlipf, Jon; Mörz, Florian; Weißhaupt, David; Oehme, Michael; Prucnal, Slawomir; Kawaguchi, Yuma; Schwarz, Daniel; Fischer, Inga Anita; Schulze, Jörg Journal: Journal of physics Issue: Volume 54:Number 44(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗