1. Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE. Issue 1 (10th December 2012) Authors: Aziz, M.; Mari, R. H.; Felix, J. F.; Mesli, A.; Taylor, D.; Lemine, M. O.; Henini, M.; Pillai, R.; Starikov, D.; Boney, C.; Bensaoula, A. Journal: Physica status solidi Issue: Volume 10:Issue 1(2013:Jan.) Page Start: 101 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗