1. Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology. (February 2017) Authors: Berthelon, R.; Andrieu, F.; Ortolland, S.; Nicolas, R.; Poiroux, T.; Baylac, E.; Dutartre, D.; Josse, E.; Claverie, A.; Haond, M. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 72 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗