1. Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing. (20th July 2018) Authors: Borland, John O; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhijeet; Basol, Bulent; Lee, Yao Jen; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 357 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗