1. Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices. (10th November 2022) Authors: Wallace, A.G.; King, R.P.; Zhelev, N.; Jaafar, A.H.; Levason, W.; Huang, R.; Reid, G.; Bartlett, P.N. Journal: Electrochimica acta Issue: Volume 432(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗