1. Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017). Issue 8 (14th August 2017) Authors: Tanaka, Atsushi; Barry, Ousmane1; Nagamatsu, Kentaro; Matsushita, Junya; Deki, Manato; Ando, Yuto; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE. Issue 8 (4th July 2017) Authors: Tanaka, Atsushi; Barry, Ousmane1; Nagamatsu, Kentaro; Matsushita, Junya; Deki, Manato; Ando, Yuto; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Physica status solidi Issue: Volume 214:Issue 8(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗