1. Strain buildup in 4H-SiC implanted with noble gases at low dose. (2018) Authors: Jiang, C.; Dagault, L.; Audurier, V.; Tromas, C.; Declémy, A.; Beaufort, M.F.; Barbot, J.F. Journal: Materials today Issue: Volume 5:Number 6(2018)Part 3 Page Start: 14722 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗