1. Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures. Issue 12 (9th September 2015) Authors: Ma, Xiaohua; Liu, Ying; Wang, Xinhua; Huang, Sen; Gao, Zhu; Bao, Qilong; Liu, Xinyu Journal: Physica status solidi Issue: Volume 212:Issue 12(2015:Dec.) Page Start: 2928 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure. (28th April 2016) Authors: Bao, Qilong; Huang, Sen; Wang, Xinhua; Wei, Ke; Zheng, Yingkui; Li, Yankui; Yang, Chengyue; Jiang, Haojie; Li, Junfeng; Hu, Anqi; Yang, Xuelin; Shen, Bo; Liu, Xinyu; Zhao, Chao Journal: Semiconductor science and technology Issue: Volume 31:Number 6(2016:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗