1. Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit. (1st April 2023) Authors: Ban, Yoshisuke; Kato, Kimihiko; Iizuka, Shota; Murakami, Shigenori; Ishibashi, Koji; Moriyama, Satoshi; Mori, Takahiro; Ono, Keiji Journal: Japanese journal of applied physics Issue: Volume 62:Number SC(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. ON current enhancement and variability suppression in tunnel FETs by the isoelectronic trap impurity of beryllium. (29th January 2021) Authors: Ban, Yoshisuke; Kato, Kimihiko; Iizuka, Shota; Moriyama, Satoshi; Ishibashi, Koji; Ono, Keiji; Mori, Takahiro Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Tunneling magnetoresistance in trilayer structures composed of group-IV-based ferromagnetic semiconductor Ge1−xFex, MgO, and Fe. (28th October 2016) Authors: Wakabayashi, Yuki K.; Okamoto, Kohei; Ban, Yoshisuke; Sato, Shoichi; Tanaka, Masaaki; Ohya, Shinobu Journal: Applied physics express Issue: Volume 9:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗