Author/Creator: Baines, Yannick - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Baines, Yannick

1. (Invited) Epitaxy of GaN on Si (111) for Power Electronics, RF and LEDs. (20th July 2018)

Authors:: Charles, Matthew; Kanyandekwe, Joël; Bos, Sandra; Baines, Yannick; Morvan, Erwan; Torres, Alphonse; Templier, François; Plissonnier, Marc
Journal:: ECS transactions
Issue:: Volume 86:Number 7(2018)
Page Start:: 233
Record Type:: Journal Article
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2. Capping stability of Mg‐implanted GaN layers grown on silicon. Issue 4 (8th November 2016)

Authors:: Lardeau‐Falcy, Aurélien; Coig, Marianne; Charles, Matthew; Licitra, Christophe; Baines, Yannick; Eymery, Joël; Mazen, Frédéric
Journal:: Physica status solidi
Issue:: Volume 214:Issue 4(2017)
Page Start:: n/a
Record Type:: Journal Article
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3. Developments in understanding the nucleation of AlN on silicon by MOCVD and its effects on defects. Issue 4 (8th November 2016)

Authors:: Charles, Matthew; Bavard, Alexis; Bouis, Renan; Baines, Yannick; Escoffier, René
Journal:: Physica status solidi
Issue:: Volume 214:Issue 4(2017)
Page Start:: n/a
Record Type:: Journal Article
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4. Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy. (24th January 2017)

Authors:: Ferrandis, Philippe; Charles, Matthew; Baines, Yannick; Buckley, Julien; Garnier, Gennie; Gillot, Charlotte; Reimbold, Gilles
Journal:: Japanese journal of applied physics
Issue:: Volume 56:Number 4(2017)Supplement
Page Start:
Record Type:: Journal Article
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