1. Tantalum Doping to Improve Switching Characteristics and Bias Stress Stability of Amorphous Indium-Gallium-Zin Oxide Thin-Film Transistors. (3rd June 2021) Authors: Baek, Seung-Ryum; Kim, Jong-Ho; Lee, Tae-Ju; Seong, Tae-Yeon Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 6(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗