1. In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5. Issue 9 (27th May 2020) Authors: Oh, Sang Ho; Baek, Kyungjoon; Son, Sung Kyu; Song, Kyung; Oh, Jang Won; Jeon, Seung-Joon; Kim, Won; Yoo, Jong Hee; Lee, Kee Jeung Journal: Nanoscale advances Issue: Volume 2:Issue 9(2020) Page Start: 3841 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface. Issue 2 (25th November 2016) Authors: Baek, Kyungjoon; Park, Sangsu; Park, Jucheol; Kim, Young-Min; Hwang, Hyunsang; Oh, Sang Ho Journal: Nanoscale Issue: Volume 9:Issue 2(2017) Page Start: 582 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Nanometer‐Scale Phase Transformation Determines Threshold and Memory Switching Mechanism. Issue 30 (12th June 2017) Authors: Chae, Byeong‐Gyu; Seol, Jae‐Bok; Song, Jeong‐Hwan; Baek, Kyungjoon; Oh, Sang‐Ho; Hwang, Hyunsang; Park, Chan‐Gyung Journal: Advanced materials Issue: Volume 29:Issue 30(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗