1. Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device. (17th May 2018) Authors: Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso Journal: Japanese journal of applied physics Issue: Volume 57:Number 6(2018)Supplement 1 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Novel mouse model of steroid-resistant allergic rhinitis by repeated intranasal administration of OVA. Issue 1 (December 2015) Authors: Izumi, Kazunari; Kawasome, Hideki; Azuma, Atsushi; Sasaki, Kenjiro; Kamada, Masayuki; Sakurai, Kazushi Journal: World Allergy Organization journal Issue: Volume 8:Issue 1(2015) Page Start: 1 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Threshold switching of a NbOx device prepared by DC reactive sputtering. (23rd May 2019) Authors: Nakajima, Ryo; Azuma, Atsushi; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso Journal: Japanese journal of applied physics Issue: Volume 58:Number SD(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Voltage Pulse Induced Resistance Change Response of ReRAM with HfO2 Layer. (20th July 2018) Authors: Azuma, Atsushi; Nakajima, Ryo; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso Journal: ECS transactions Issue: Volume 86:Number 3(2018) Page Start: 13 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗