1. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE. Issue 40 (18th September 2018) Authors: Avit, Geoffrey; Zeghouane, Mohammed; André, Yamina; Castelluci, Dominique; Gil, Evelyne; Baé, Si-Young; Amano, Hiroshi; Trassoudaine, Agnès Journal: CrystEngComm Issue: Volume 20:Issue 40(2018) Page Start: 6207 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Selective growth of ordered hexagonal InN nanorods. Issue 16 (1st April 2019) Authors: Zeghouane, Mohammed; Avit, Geoffrey; Cornelius, Thomas W.; Salomon, Damien; André, Yamina; Bougerol, Catherine; Taliercio, Thierry; Meguekam-Sado, Ariane; Ferret, Pierre; Castelluci, Dominique; Gil, Evelyne; Tournié, Eric; Thomas, Olivier; Trassoudaine, Agnès Journal: CrystEngComm Issue: Volume 21:Issue 16(2019) Page Start: 2702 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗