1. Ex situ n+ doping of GeSn alloys via non-equilibrium processing. (8th May 2018) Authors: Prucnal, S; Berencén, Y; Wang, M; Rebohle, L; Böttger, R; Fischer, I A; Augel, L; Oehme, M; Schulze, J; Voelskow, M; Helm, M; Skorupa, W; Zhou, S Journal: Semiconductor science and technology Issue: Volume 33:Number 6(2018:Jun.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗