1. Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices. Issue 2 (7th January 2016) Authors: Cerbu, F.; Andreev, D. V.; Lisoni, J.; Breuil, L.; Afanas'ev, V. V.; Stesmans, A.; Houssa, M. Journal: Physica status solidi Issue: Volume 213:Issue 2(2016:Feb.) Page Start: 265 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗