1. Electrical and optical properties of heavily Ge-doped AlGaN. (28th January 2019) Authors: Blasco, R; Ajay, A; Robin, E; Bougerol, C; Lorentz, K; Alves, L C; Mouton, I; Amichi, L; Grenier, A; Monroy, E Journal: Journal of physics Issue: Volume 52:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Radiation sensors based on GaN microwires. (10th April 2018) Authors: Verheij, D; Peres, M; Cardoso, S; Alves, L C; Alves, E; Durand, C; Eymery, J; Lorenz, K Journal: Journal of physics Issue: Volume 51:Number 17(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗